Other articles related with "AlGaN interlayer":
47303 Jiao-Xin Guo(郭娇欣), Jie Ding(丁杰), Chun-Lan Mo(莫春兰), Chang-Da Zheng(郑畅达), Shuan Pan(潘拴), Feng-Yi Jiang(江风益)
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    Chin. Phys. B   2020 Vol.29 (4): 47303-047303 [Abstract] (528) [HTML 1 KB] [PDF 1344 KB] (188)
36801 Wu Yu-Xin(吴玉新), Zhu Jian-Jun(朱建军), Chen Gui-Feng(陈贵锋), Zhang Shu-Ming(张书明), Jiang De-Sheng(江德生), Liu Zong-Shun(刘宗顺), Zhao De-Gang(赵德刚), Wang Hui(王辉), Wang Yu-Tian(王玉田), and Yang Hui(杨辉)
  Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer
    Chin. Phys. B   2010 Vol.19 (3): 36801-036801 [Abstract] (1776) [HTML 1 KB] [PDF 2177 KB] (3110)
4413 Wu Yu-Xin(吴玉新), Zhu Jian-Jun(朱建军), Zhao De-Gang(赵德刚), Liu Zong-Shun(刘宗顺), Jiang De-Sheng(江德生), Zhang Shu-Ming(张书明), Wang Yu-Tian(王玉田), Wang Hui (王辉), Chen Gui-Feng(陈贵锋), and Yang Hui(杨辉)
  The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates
    Chin. Phys. B   2009 Vol.18 (10): 4413-4417 [Abstract] (1608) [HTML 1 KB] [PDF 2560 KB] (1235)
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